Electronics I (EENG 3510) Spring 2007

Course Description:
Fundamentals to contemporary electronic devices, terminal characteristics of active semiconductor devices, and models of the bipolar junction transistor (BJT) and metal-oxide semiconductor field effect transistor (MOSFET) in the cutoff and saturation region will be introduced. Incremental and DC models of diodes, BJTs, and MOSFETs will be studied to design single and multistage amplifiers.

Prerequisites: EENG 2610

Time:              T-TH 4:00pm – 5:20 pm

Classroom:    B227

Instructor:      Dr. Hai Deng (Office: B230    Phone: 891-6876   Email: hai@unt.edu)

Office Hours:  T-TH 2:30 – 3:30pm

Textbooks:
 Adel S. Sedra and Ken C. Smith, Microelectronic Circuits, 5th ed, Oxford University Press, 2004

Course Coverage:
Signals and Spectrum
Analog and digital signals
Amplifiers
Circuit model for amplifiers
Operational amplifiers
Diodes
MOS Field-Effect Transistors
Bipolar Junction Transistors

Attendance Policy:   Attending class is required

Grading:
            Attendance and Class participation (15%)
Homework (20%)
Midterm Exam (30%)
Final Exam (35%)
 

Software:
MATLAB and SPICE may be used in some homework.

Tentative Schedule:
Introduction:   (Jan. 16)
Chapter 1: Introduction to Electronics (Jan. 18, 23, 25, 30)
Chapter 2: Operational Amplifiers (Feb. 1, 6, 8)
Chapter 3:  Diodes (Feb. 13, 15, 20, 22, 27, Mar. 1)
Chapter 4:  MOS Field-Effect Transistors (Mar.6, 8, 13, 15)
Spring break (Mar. 20, 22   No class)
Pre-midterm review/preparation (Mar. 27)
Midterm exam (Mar. 29)
Chapter 4:  MOS Field-Effect Transistors (cont.) (Apr.3, 5, 10)
Chapter 5: Bipolar Junction Transistors (Apr. 12, 17, 19, 24, 26)

Wireless Policy:
Wireless device (such as cell phone and pager) is NOT allowed for usage in classroom.

ADA Statement:
We comply with the Americans with Disabilities Act in making reasonable accommodations for qualified students with disabilities. Students with special needs should make arrangements with the instructor to require accommodations.